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SI4477DY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI4477DY-T1-GE3
Description
场效应管(MOSFET) 3W；6.6W 20V 26.6A 1个P沟道 SOIC-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source Saturation Current | 18A |
| Drain-Source On-Resistance | 0.0062Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,545
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6141 | |
| 100+ | $ 0.5055 | |
| 1250+ | $ 0.4554 | |
| 2500+ | $ 0.4331 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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