Manufacturer
VISHAYManufacturer Product Number
SI4455DY-T1-GE3
Description
场效应管(MOSFET) 5.9W 150V 2A 1个P沟道 SOIC-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
场效应管(MOSFET) 5.9W 150V 2A 1个P沟道 SOIC-8
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Saturation Current | 2A |
| Gate-Source Breakdown Voltage | 150V |
| Drain-Source On-Resistance | 0.295Ω |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6420 | |
| 10+ | $ 0.5250 | |
| 30+ | $ 0.4665 | |
| 100+ | $ 0.4080 | |
| 500+ | $ 0.3732 | |
| 1000+ | $ 0.3551 |
Minimum:1/Multiple:1
Total amount: