Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI4401FDY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI4401FDY-T1-GE3
Description
Trans MOSFET P-CH 40V 9.9A 8-Pin SOIC N T/R
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 40V |
| Threshold Voltage | 2.3 V @ 250 µA |
| Gate Charge | 100nC@10V |
| Input Capacitance | 4000pF@20V |
| Power | 2.5W, 5W |
| Continuous Drain Current | 9.9A, 14A |
| On-Resistance | 14.2mΩ@10A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 105
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 3.5190 | |
| 50+ | $ 2.9257 | |
| 100+ | $ 2.3269 | |
| 500+ | $ 1.8103 | |
| 1000+ | $ 1.6502 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI4403CDY-T1-GE3
P-CH 20V 10A 12,5mOhm SOIC-8 RoHSconf
VISHAY
SI4403CDY-T1-GE3
场效应管(MOSFET) 5W 20V 13.4A 1个P沟道 SO-8
VISHAY
SI4403DDY-T1-GE3
MOSFET -20V Vds TrenchFET -/+8V Vgs
VISHAY
SI4404DY-T1-E3-VB
--
Vbsemi