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SI3477DV-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI3477DV-T1-GE3
Description
Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -40A
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 1V@250µA |
| Continuous Drain Current | 8A |
| Drain-Source Voltage | 12V |
| Gate Charge | 90nC@10V |
| Power | 2W, 4.2W |
| On-Resistance | 17.5mΩ@9A, 4.5V |
| Input Capacitance | 2600pF@6V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 14
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.1057 | |
| 10+ | $ 0.9135 | |
| 30+ | $ 0.8160 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI3481DV-T1-GE3-VB
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Vbsemi
SI3483CDV-T1-E3
Single P-Channel 30 V 0.053 Ohm 18 nC 2 W Silicon Surface Mount Mosfet - SC-74
VISHAY
SI3483CDV-T1-E3
--
VISHAY
SI3483CDV-T1-E3
Single P-Channel 30 V 0.053 Ohm 18 nC 2 W Silicon Surface Mount Mosfet - SC-74
VISHAY
