Manufacturer
VISHAYManufacturer Product Number
SI3430DV-T1-GE3
Description
Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Manufacturer Standard Lead Time
2-3
Detailed Description
Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-Channel |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 1.8A |
| Power | 1.14W |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4498 | |
| 100+ | $ 0.3551 | |
| 750+ | $ 0.3133 | |
| 1500+ | $ 0.2938 | |
| 3000+ | $ 0.2771 |
Minimum:1/Multiple:1
Total amount: