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SI3421DV-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI3421DV-T1-GE3
Description
场效应管(MOSFET) 4.2W 30V 8A 1个P沟道 TSOP-6-1.5mm
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 8A |
| Power | 2W, 4.2W |
| Gate Charge | 69nC@10V |
| On-Resistance | 19.2mΩ@7A，10V |
| Input Capacitance | 2580pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,780
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.3370 | |
| 50+ | $ 0.2702 | |
| 150+ | $ 0.2409 | |
| 500+ | $ 0.1838 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI3424CDV-T1-GE3
MOSFET N-CH 30V 8A 6-TSOP
VISHAY
SI3424CDV-T1-GE3
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SI3429EDV-T1-GE3
20V, 8A, 21MOHM, P-CH, TSOP-6
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SI3429EDV-T1-GE3
20V, 8A, 21MOHM, P-CH, TSOP-6
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