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SI2399DS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2399DS-T1-GE3
Description
MOSFET -20V -6A 2.5W
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1.5V@250µA |
| Type | P-Channel |
| Power | 1.25W, 2.5W |
| Continuous Drain Current | 5.1A |
| Gate Charge | 20 nC @ 4.5 V |
| On-Resistance | 34mΩ@5.1A, 10V |
| Input Capacitance | 835pF@10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 10,067
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.3243 | |
| 10+ | $ 0.8244 | |
| 100+ | $ 0.5320 | |
| 500+ | $ 0.4052 | |
| 1000+ | $ 0.3648 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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