Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI2343DS-T1-E3
Manufacturer
VISHAYManufacturer Product Number
SI2343DS-T1-E3
Description
场效应管(MOSFET) 750mW 30V 3.1A 1个P沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 750mW |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Drain-Source Voltage | 30V |
| Gate Charge | 21nC@10V |
| Continuous Drain Current | 3.1 A |
| Input Capacitance | 540 pF @ 15 V |
| On-Resistance | 53mΩ@4A,10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2521 | |
| 100+ | $ 0.2019 | |
| 750+ | $ 0.1782 | |
| 1500+ | $ 0.1657 | |
| 3000+ | $ 0.1560 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
Si2343DS-T1-E3-HXY
--
HUAXUANYANG
SI2343DS-T1-E3-MS
类型：P沟道漏源电压(Vdss)：-30V连续漏极电流(Id)：-4A功率(Pd)：1.56W导通电阻(RDS(on)@Vgs,Id)：45mΩ@10V,3A阈值电压Vgs(th)@Id)：-1.0V至-2.2V@250uA
MSKSEMI
SI2343DS-T1-GE3
MOSFET 30V 4.0A 1.25W 53mohm @ 10V
VISHAY
Si2343DS-T1-GE3-HXY
--
HUAXUANYANG
