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SI2333DDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2333DDS-T1-GE3
Description
场效应管(MOSFET) 1.2W；1.7W 12V 6A 1个P沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Saturation Current | 6A |
| Power | 1.7 W |
| Drain-Source On-Resistance | 0.028 Ω |
| Gate-Source Breakdown Voltage | 12V |
| Input Capacitance | 236 pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 24,437
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1991 | |
| 100+ | $ 0.1518 | |
| 750+ | $ 0.1253 | |
| 1500+ | $ 0.1128 | |
| 3000+ | $ 0.1044 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2333DDS-T1-GE3-MS
类型：P沟道漏源电压(Vdss)：-12V连续漏极电流(Id)：-5.5A功率(Pd)：1.56W导通电阻(RDS(on)@Vgs,Id)：25mΩ@-4.5V,-4A阈值电压Vgs(th)@Id)：-0.3V至-1V@250uA
MSKSEMI
SI2333DDS-T1-GE3-VB
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SI2333DS
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TECH PUBLIC
SI2333DS-T1-GE3
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