Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI2329DS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2329DS-T1-GE3
Description
场效应管(MOSFET) 2.5W 8V 6A 1个P沟道 SOT-23
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Continuous Drain Current | 5.3A |
| Power | 2.5W |
| Type | P-Channel |
| Gate Charge | 29nC@4.5V |
| Drain-Source Voltage | 8V |
| Threshold Voltage | 800 mV @ 250 µA |
| On-Resistance | 30mΩ@5.3A,4.5V |
| Input Capacitance | 1485pF@4V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 51
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5236 | |
| 10+ | $ 0.4178 | |
| 30+ | $ 0.3648 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2329DS-T1-GE3-VB
--
Vbsemi
SI2333
--
PAKER MICRO
SI2333
场效应管(MOSFET) 1.25W 12V 7.1A 1个P沟道 SOT-23
BORN
SI2333(XBLW)
--
XBLW
