Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI2325DS-T1-E3
Manufacturer
VISHAYManufacturer Product Number
SI2325DS-T1-E3
Description
MOSFET P-CH 150V 0.53A SOT23-3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 750mW |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4.5V@250μA |
| Drain-Source Voltage | 150V |
| Gate Charge | 12nC@10V |
| Input Capacitance | 510pF@25V |
| Continuous Drain Current | 530 mA |
| On-Resistance | 1.2 Ω @ 500 mA, 10 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 30,128
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6780 | |
| 10+ | $ 1.0611 | |
| 100+ | $ 0.7060 | |
| 500+ | $ 0.5542 | |
| 1000+ | $ 0.5055 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2325DS-T1-GE3
场效应管(MOSFET) 750mW 150V 530mA 1个P沟道 SOT-23
VISHAY
SI2325DS-T1-GE3
MOSFET P-CH 150V 0.53A SOT-23
VISHAY
SI2325DS-T1-GE3
MOSFET P-CH 150V 0.53A SOT-23
VISHAY
SI2325DS-T1-GE3
场效应管(MOSFET) 750mW 150V 530mA 1个P沟道 SOT-23
VISHAY
