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SI2323DS-T1-E3
Manufacturer
VISHAYManufacturer Product Number
SI2323DS-T1-E3
Description
场效应管(MOSFET) 750mW 20V 3.7A 1个P沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 750mW |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250µA |
| Continuous Drain Current | 3.7A |
| Gate Charge | 19 nC @ 4.5 V |
| On-Resistance | 39mΩ@4.7A，4.5V |
| Input Capacitance | 1020pF@10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4637 | |
| 100+ | $ 0.3662 | |
| 750+ | $ 0.3245 | |
| 1500+ | $ 0.3050 | |
| 3000+ | $ 0.2855 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
Si2323DS-T1-E3-HXY
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HUAXUANYANG
SI2323DS-T1-E3-MS
类型：P沟道漏源电压(Vdss)：-20V连续漏极电流(Id)：-4.5A功率(Pd)：1.56W导通电阻(RDS(on)@Vgs,Id)：40mΩ@4.5V,4A阈值电压Vgs(th)@Id)：-0.3V至-1.0V@250uA
MSKSEMI
SI2323DS-T1-ES
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EIECSUPER
Si2323DS-T1-GE3-HXY
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HUAXUANYANG
