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SI2318CDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2318CDS-T1-GE3
Description
场效应管(MOSFET) 1.25W；2.1W 40V 5.6A 1个N沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 40V |
| Power | 2.1W |
| Input Capacitance | 30pF |
| Drain-Source Saturation Current | 5.6A |
| Drain-Source On-Resistance | 0.042Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 13
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2381 | |
| 100+ | $ 0.1894 | |
| 750+ | $ 0.1671 | |
| 1500+ | $ 0.1560 | |
| 3000+ | $ 0.1476 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2318CDS-T1-GE3-VB
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Vbsemi
SI2318DS
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TECH PUBLIC
SI2318DS-T1-E3
场效应管(MOSFET) 750mW 40V 3A 1个N沟道 SOT-23
VISHAY
SI2318DS-T1-E3-MS
类型：N沟道漏源电压(Vdss)：40V连续漏极电流(Id)：4A功率(Pd)：1.56W导通电阻(RDS(on)@Vgs,Id)：36mΩ@10V,3A阈值电压Vgs(th)@Id)：1.0V至2.5V@250uA
MSKSEMI