Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI2316BDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2316BDS-T1-GE3
Description
场效应管(MOSFET) 1.25W；1.66W 30V 4.5A 1个N沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 4.5A |
| Power | 1.25W, 1.66W |
| Gate Charge | 9.6nC @ 10V |
| On-Resistance | 50mΩ @ 3.9A, 10V |
| Input Capacitance | 350pF @ 15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 18
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3774 | |
| 100+ | $ 0.3008 | |
| 750+ | $ 0.2674 | |
| 1500+ | $ 0.2479 | |
| 3000+ | $ 0.2339 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
Si2316BDS-T1-GE3-HXY
--
HUAXUANYANG
Si2316DS-T1-E3-HXY
--
HUAXUANYANG
SI2317A
MOSFET P-CH 20V 4.2A SOT23
UMW
SI2318
场效应管(MOSFET) 38mΩ@10V 40V 5A 1个N沟道 SOT-23
HUAXUANYANG
