Manufacturer
VISHAYManufacturer Product Number
SI2312CDS-T1-GE3
Description
场效应管(MOSFET) 1.25W;2.1W 20V 6A 1个N沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
场效应管(MOSFET) 1.25W;2.1W 20V 6A 1个N沟道 SOT-23
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source Saturation Current | 6A |
| Input Capacitance | 55 pF |
| Power | 2.1W |
| Drain-Source On-Resistance | 0.0318Ω |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1574 | |
| 200+ | $ 0.1198 | |
| 1500+ | $ 0.1030 | |
| 3000+ | $ 0.0947 |
Minimum:1/Multiple:1
Total amount: