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SI2307BDS-T1-E3
Manufacturer
VISHAYManufacturer Product Number
SI2307BDS-T1-E3
Description
MOSFET P-CH 30V 2.5A SOT23-3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 750mW |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 2.5A |
| Gate Charge | 15nC@10V |
| Input Capacitance | 380 pF @ 15 V |
| On-Resistance | 78mΩ@3.2A，10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,340
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0388 | |
| 10+ | $ 0.7018 | |
| 100+ | $ 0.4554 | |
| 500+ | $ 0.3913 | |
| 1000+ | $ 0.3175 | |
| 5000+ | $ 0.3064 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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类型：P沟道漏源电压(Vdss)：-30V连续漏极电流(Id)：-3.4A功率(Pd)：1.56W导通电阻(RDS(on)@Vgs,Id)：75mΩ@-10V,-3A阈值电压Vgs(th)@Id)：-1.0V至-2.5V@250uA
MSKSEMI
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TECH PUBLIC