Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI2306BDS-T1-E3
Manufacturer
VISHAYManufacturer Product Number
SI2306BDS-T1-E3
Description
MOSFET N-CH 30V 3.16A SOT23-3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 750mW |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Gate Charge | 4.5 nC @ 5 V |
| Continuous Drain Current | 3.16A |
| On-Resistance | 47mΩ@3.5A, 10V |
| Input Capacitance | 305pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,876
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7715 | |
| 5+ | $ 0.6085 | |
| 10+ | $ 0.5180 | |
| 50+ | $ 0.3481 | |
| 100+ | $ 0.3370 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
Si2306BDS-T1-GE3-HXY
--
HUAXUANYANG
SI2306BDS-T1-GE3-VB
--
Vbsemi
SI2307
--
PAKER MICRO
SI2307-TP
MOSFET P-Channel MOSFET, SOT-23 package
MCC
