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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI1025X-T1-GE3

Manufacturer

VISHAY

Manufacturer Product Number

SI1025X-T1-GE3

Description

场效应管(MOSFET) 250mW 60V 190mA 2个P沟道 SC-89-6

Manufacturer Standard Lead Time

5-7个

Detailed Description

场效应管(MOSFET) 250mW 60V 190mA 2个P沟道 SC-89-6

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Power	0.25W
Gate-Source Breakdown Voltage	60V
Drain-Source On-Resistance	4Ω
Drain-Source Saturation Current	0.19 A

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 980

Quantity	Unit Price	Ext Price
1+	$ 0.2924
10+	$ 0.2521
30+	$ 0.2339
100+	$ 0.2131
500+	$ 0.2033

Price For：Each

Minimum:1/Multiple:1

Total amount:

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场效应管(MOSFET) 250mW 60V 305mA；190mA 1个N沟道+1个P沟道 SC-89-6

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