Manufacturer
VISHAYManufacturer Product Number
IRFBG30PBF
Description
场效应管(MOSFET) 125W 1kV 3.1A 1个N沟道 TO-220
Manufacturer Standard Lead Time
5-7个
Detailed Description
场效应管(MOSFET) 125W 1kV 3.1A 1个N沟道 TO-220
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 1000V |
| Drain-Source Saturation Current | 3.1A |
| Drain-Source On-Resistance | 5Ω |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.1461 | |
| 10+ | $ 0.9706 | |
| 50+ | $ 0.8411 | |
| 100+ | $ 0.7311 | |
| 500+ | $ 0.6823 | |
| 1000+ | $ 0.6615 |
Minimum:1/Multiple:1
Total amount: