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IRFBE30PBF
Manufacturer
VISHAYManufacturer Product Number
IRFBE30PBF
Description
场效应管(MOSFET) 125W 800V 4.1A 1个N沟道 TO-220AB
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-Channel |
| Threshold Voltage | 4V@250µA |
| Drain-Source Voltage | 800V |
| Continuous Drain Current | 4.1A |
| Input Capacitance | 1300pF @ 25V |
| Gate Charge | 78 nC @ 10 V |
| Power | 125W |
| On-Resistance | 3Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 7,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7130 | |
| 100+ | $ 0.5640 | |
| 1000+ | $ 0.5361 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIRFBE30PBF-BE3
MOSFET N-CH 800V 4.1A TO220AB
VISHAY
IRFBE30PBF-BE3
MOSFET 800V N-CH HEXFET
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IRFBE30SPBF
场效应管(MOSFET) 125W 800V 4.1A 1个N沟道 D2PAK(TO-263AB)
VISHAY
IRFBE30SPBF
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VISHAY
