Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IRF640SPBF
Manufacturer
VISHAYManufacturer Product Number
IRF640SPBF
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Saturation Current | 18A |
| Gate-Source Breakdown Voltage | 200V |
| Drain-Source On-Resistance | 0.18Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 74
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6084 | |
| 10+ | $ 1.3563 | |
| 30+ | $ 1.2185 | |
| 100+ | $ 0.9692 | |
| 500+ | $ 0.9024 | |
| 1000+ | $ 0.8731 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIRF640STRLPBF
MOSFET N-Chan 200V 18 Amp
VISHAY
IRF640STRLPBF
场效应管(MOSFET) 3.1W；130W 200V 18A 1个N沟道 TO-263
VISHAY
IRF640STRRPBF
--
VISHAY
IRF640STRRPBF
MOSFET N-Chan 200V 18 Amp
VISHAY
