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2N7002K-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
2N7002K-T1-GE3
Description
场效应管(MOSFET) 350mW 60V 300mA 1个N沟道 SOT-23
Manufacturer Standard Lead Time
2-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 0.35W |
| Gate-Source Breakdown Voltage | 60V |
| Drain-Source Saturation Current | 0.3 A |
| Drain-Source On-Resistance | 2Ω |
| Input Capacitance | 2.5pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 25,088
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5000+ | $ 0.0251 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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2N7002K-T1-GE3-HXY
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HUAXUANYANG
2N7002K-TP
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MCC
2N7002K-TP
MOSFET 350mW, 60V, 340mA
MCC