Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TK16A60W,S4VX(M
Manufacturer
ToshibaManufacturer Product Number
TK16A60W,S4VX(M
Description
绝缘栅场效应管（MOSFET）
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 600V |
| Input Capacitance | 4pF |
| Drain-Source On-Resistance | 0.19Ω |
| Drain-Source Saturation Current | 15.8A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 235
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6336 | |
| 2500+ | $ 0.5974 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllTK16A60W5,S4VX(M
Toshiba N沟道 Si MOSFET TK16A60W5,S4VX(M, 15.8 A, Vds=600 V, 3引脚 TO-220SIS封装
Toshiba
TK16E60W,S1VX
MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
Toshiba
TK16E60W,S1VX(S
Toshiba N沟道 Si MOSFET TK16E60W,S1VX(S, 15.8 A, Vds=600 V, 3引脚 TO-220封装
Toshiba
TK16G60W,RVQ
MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
Toshiba
