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TK11P65W,RQ(S
Manufacturer
ToshibaManufacturer Product Number
TK11P65W,RQ(S
Description
Toshiba DTMOSIV 系列 Si N沟道 MOSFET TK11P65W,RQ(S, 11.1 A, Vds=650 V, 3针+焊片 DPAK封装
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 650V |
| Input Capacitance | 2.8pF |
| Drain-Source On-Resistance | 0.44Ω |
| Drain-Source Saturation Current | 11.1A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 100
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.2059 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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