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T2N7002BK,LM
Manufacturer
ToshibaManufacturer Product Number
T2N7002BK,LM
Description
场效应管(MOSFET) 320mW 60V 400mA 1个N沟道 SOT-23
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 1 W |
| Gate-Source Breakdown Voltage | 60V |
| Drain-Source Saturation Current | 0.4A |
| Input Capacitance | 1.3pF |
| Drain-Source On-Resistance | 1.75Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 10
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.0696 | |
| 50+ | $ 0.0682 | |
| 150+ | $ 0.0668 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
T2N7002BK,LM(T
绝缘栅场效应管（MOSFET）
Toshiba
T2N7002BK,LM(T
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Toshiba
T2N7002BK-ES
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EIECSUPER
T2N7002BK-MS
类型：N沟道漏源电压(Vdss)：60V连续漏极电流(Id)：300mA功率(Pd)：350mW导通电阻(RDS(on)@Vgs,Id)：2.2Ω@10V,300mA
MSKSEMI