Manufacturer
ToshibaManufacturer Product Number
SSM6N55NU,LF
Description
MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD
Manufacturer Standard Lead Time
3-5
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Continuous Drain Current | 4A |
| Power | 1 W |
| Drain-Source Voltage | 30V |
| Operating Temperature | 150℃ (TJ) |
| Type | 2 N-channel (dual) |
| Gate Charge | 2.5nC @ 4.5V |
| On-Resistance | 46 milliohms @ 4A, 10V |
| Threshold Voltage | 2.5V @ 100µA |
| Input Capacitance | 280pF @ 15V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2061 |
Minimum:1/Multiple:1
Total amount: