Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SSM3J328R,LF(T
Manufacturer
ToshibaManufacturer Product Number
SSM3J328R,LF(T
Description
场效应管(MOSFET) SSM3J328R,LF(T SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source Saturation Current | 6A |
| Power | 1 W |
| Input Capacitance | 99pF |
| Drain-Source On-Resistance | 0.0298Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,779
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0696 | |
| 200+ | $ 0.0446 | |
| 1500+ | $ 0.0390 | |
| 3000+ | $ 0.0334 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SSM3J328R-HXY
--
HUAXUANYANG
SSM3J328R-VB
--
Vbsemi
SSM3J331R,LF
--
Toshiba
SSM3J331R,LF
MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF
Toshiba
