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RN4909,LF(CT

Manufacturer

Toshiba

Manufacturer Product Number

RN4909,LF(CT

Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 200mW Surface Mount US6

Manufacturer Standard Lead Time

3-5

Detailed Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 200mW Surface Mount US6

Datasheet

Product Attributes

Type Description
Category Boxes, Enclosures, Racks andBox Components
Power 200 mW
Ji She Ji Ji Chuan Voltage(vceo) 50V
Ji Dian Ji Jie Zhi Current(icbo) 500nA
Ji Dian Ji Current(ic) 100mA
Jing Ti Guan Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistance Bi 22 kΩ
DC Gain (hFE@Ic, Vce) 70 @ 10mA, 5V
Collector-Emitter Saturation Voltage (VCE(sat)) 300mV @ 250µA, 5mA
Input Resistance 47 kiloohms
Te Zheng Frequency 200MHz, 250MHz

Documents & Media

Resource Type Link

Environmental & Export Classifications

Attribute Description

Additional Resources

Attribute Description

In Stock: 100

Quantity Unit Price Ext Price
1+ $ 0.1601
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Minimum:1/Multiple:1

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