Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
RN2107MFV,L3F(CT
Manufacturer
ToshibaManufacturer Product Number
RN2107MFV,L3F(CT
Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 150 mW |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Ji Dian Ji Jie Zhi Current（icbo） | 500nA |
| Ji Dian Ji Current（ic） | 100mA |
| Input Resistance | 10kΩ |
| DC Gain (hFE@Ic, Vce) | 80@10mA, 5V |
| Jing Ti Guan Type | PNP-Pre-biased |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 300mV@500µA, 5mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 7,158
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2033 | |
| 10+ | $ 0.1212 | |
| 100+ | $ 0.0752 | |
| 500+ | $ 0.0543 | |
| 1000+ | $ 0.0432 | |
| 5000+ | $ 0.0265 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRN2108,LF(CT
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SSM
Toshiba
RN2114(TE85L,F)
--
Toshiba
RN212-0.4-02-39M
CMC 39MH 400MA 2LN TH
Schaffner
RN212-0.5-02-27M
CMC 27MH 500MA 2LN TH
Schaffner