Manufacturer
ToshibaManufacturer Product Number
RN1303(TE85L,F)
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
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| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Ji Dian Ji Jie Zhi Current(icbo) | 500nA |
| DC Gain (hFE@Ic, Vce) | 70 @ 10mA, 5V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 300mV @ 250µA, 5mA |
| Jing Ti Guan Type | NPN - Pre-bias |
| Ji Dian Ji Current(ic) | 100 mA |
| Ji She Ji Ji Chuan Voltage(vceo) | 50 V |
| Resistance Bi | 22 kOhms |
| Power | 100 mW |
| Input Resistance | 22 kOhms |
| Te Zheng Frequency | 250 MHz |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 10+ | $ 0.0668 | |
| 100+ | $ 0.0529 | |
| 300+ | $ 0.0473 |
Minimum:1/Multiple:1
Total amount:
RN1303,LF
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM
Toshiba
RN1304,LXHF
雙極結晶體管 - 預偏置 AUTO AEC-Q Single NPN , R1=47kOhm, R2=47kOhm, VCEO=50V, IC=0.1A (SOT-323)
Toshiba