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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RN1108MFV,L3F

Manufacturer

Toshiba

Manufacturer Product Number

RN1108MFV,L3F

Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM

Manufacturer Standard Lead Time

3-5

Detailed Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Power	150 mW
Ji She Ji Ji Chuan Voltage（vceo）	50V
Ji Dian Ji Jie Zhi Current（icbo）	500nA
Jing Ti Guan Type	NPN - Pre-biased
Ji Dian Ji Current（ic）	100mA
DC Gain (hFE@Ic, Vce)	80@10mA, 5V
Input Resistance	22 kΩ
Collector-Emitter Saturation Voltage (VCE(sat))	300mV@500µA, 5mA

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 100

Quantity	Unit Price	Ext Price
1+	$ 0.1212

Price For：Each

Minimum:1/Multiple:1

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