Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
RN1104MFV,L3F
Manufacturer
ToshibaManufacturer Product Number
RN1104MFV,L3F
Description
TRANS PREBIAS NPN 0.15W VESM
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 150 mW |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Ji Dian Ji Jie Zhi Current（icbo） | 500nA |
| Jing Ti Guan Type | NPN - Pre-biased |
| Ji Dian Ji Current（ic） | 100mA |
| DC Gain (hFE@Ic, Vce) | 80@10mA, 5V |
| Input Resistance | 47kΩ |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 300mV@500µA, 5mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 44
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0348 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRN1104MFV,L3F(CT
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
Toshiba
RN1105,LF(CT
TRANS PREBIAS NPN 50V 0.1W SSM
Toshiba
RN1105MFV,L3F(CT
--
Toshiba
RN1106,LF(CT
--
Toshiba