Manufacturer
ToshibaManufacturer Product Number
2SA1182-Y,LF
Description
两极晶体管 - BJT Bias Resistor Built-in transistor
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 150 mW |
| Te Zheng Frequency | 200MHz |
| Jing Ti Guan Type | PNP |
| Ji Dian Ji Current(ic) | 500mA |
| Ji Dian Ji Jie Zhi Current(icbo) | 100nA |
| Ji She Ji Ji Chuan Voltage(vceo) | 30 V |
| Operating Temperature | 125°C |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 250mV@10mA, 100mA |
| DC Gain (hFE@Ic, Vce) | 120@100mA, 1V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 3000+ | $ 0.0585 | |
| 6000+ | $ 0.0515 | |
| 9000+ | $ 0.0487 | |
| 15000+ | $ 0.0460 | |
| 21000+ | $ 0.0432 | |
| 30000+ | $ 0.0418 | |
| 75000+ | $ 0.0376 | |
| 150000+ | $ 0.0348 | |
| 300000+ | $ 0.0348 |
Minimum:1/Multiple:1
Total amount: