Manufacturer
Taiwan SemiconductorManufacturer Product Number
TSM180N03PQ33 RGG
Description
表面贴装 N 沟道 30V 25A(Tc) 21W(Tc) 8-PDFN(3x3)
Manufacturer Standard Lead Time
10-15
Detailed Description
表面贴装 N 沟道 30V 25A(Tc) 21W(Tc) 8-PDFN(3x3)
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Threshold Voltage | 2.5 V @ 250 μA |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Operating Temperature | 150℃ |
| Continuous Drain Current | 25A |
| Power | 21 W |
| Input Capacitance | 345pF@25V |
| Gate Charge | 4.1 nC @ 4.5 V |
| On-Resistance | 18mΩ@12A, 10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7784 | |
| 10+ | $ 0.4832 | |
| 100+ | $ 0.3105 | |
| 500+ | $ 0.2367 | |
| 1000+ | $ 0.2117 | |
| 2000+ | $ 0.1922 |
Minimum:1/Multiple:1
Total amount:
TSM200N03DPQ33 RGG
Mosfet Array 2 N-Channel (Dual) 30V 20A (Tc) 20W Surface Mount 8-PDFN (3x3)
Taiwan Semiconductor