Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD88537ND
Manufacturer
TIManufacturer Product Number
CSD88537ND
Description
MOSFET 60-V Dual N-Channel Power MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Power | 2.1W |
| Drain-Source Saturation Current | 15A |
| Input Capacitance | 5.2pF |
| Drain-Source On-Resistance | 0.019Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 19,175
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.4758 | |
| 10+ | $ 2.2141 | |
| 100+ | $ 1.4956 | |
| 500+ | $ 1.1878 | |
| 1000+ | $ 1.1140 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllCSD88537NDT
MOSFET 60V Dual NCh NexFET Pwr MOSFET
TI
CSD88537NDT
Power MOSFET 8-Pin SOIC T/R
TI
CSD88539ND
--
TI
CSD88539ND
MOSFET 60-V Dual N-Channel Power MOSFET
TI
