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CSD23203WT
Manufacturer
TIManufacturer Product Number
CSD23203WT
Description
Texas Instruments NexFET 系列 P沟道 Si MOSFET CSD23203WT, 3 A, Vds=8 V, 6引脚 DSBGA封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 750mW |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 1.1 V @ 250 µA |
| Continuous Drain Current | 3A |
| Gate Charge | 6.3nC@4.5V |
| Drain-Source Voltage | 8V |
| On-Resistance | 19.4mΩ@1.5A, 4.5V |
| Input Capacitance | 914pF@4V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 37,581
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.8756 | |
| 10+ | $ 1.8228 | |
| 100+ | $ 1.2185 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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