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CSD19538Q2T
Manufacturer
TIManufacturer Product Number
CSD19538Q2T
Description
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Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source On-Resistance | 0.072Ω |
| Drain-Source Saturation Current | 14.4A |
| Input Capacitance | 16.4pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 243
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3816 | |
| 10+ | $ 0.3036 | |
| 30+ | $ 0.2702 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllCSD19538Q3A
表面贴装型-N-通道-100V-15A（Ta）-2.8W（Ta）,-23W（Tc）-8-VSONP（3x3.15）
TI
CSD19538Q3A
CSD19538Q3A CSD19538Q3A
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CSD19538Q3AT
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TI
CSD19538Q3AT
MOSFET 100V N-Channel NexFET Power MOSFET 8-VSONP -55 to 150
TI
