Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD19535KTTT
Manufacturer
TIManufacturer Product Number
CSD19535KTTT
Description
MOSFET N-CH 100V 200A TO263
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source Saturation Current | 200A |
| Input Capacitance | 38pF |
| Drain-Source On-Resistance | 0.0041Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 10,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 4.5174 | |
| 100+ | $ 3.9590 | |
| 250+ | $ 2.7767 | |
| 1000+ | $ 2.2364 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
CSD19536KTT
--
TI
CSD19536KTTT
MOSFET N-CH 100V 200A TO263
TI
CSD19537Q3
绝缘栅场效应管（MOSFET）
TI
CSD19537Q3
Trans MOSFET N-CH 100V 50A 8-Pin VSON-CLIP T/R
TI
