Manufacturer
TIManufacturer Product Number
CSD18536KTTT
Description
Texas Instruments NexFET 系列 N沟道 MOSFET CSD18536KTTT, 349 A, Vds=60 V, 3针+焊片 D2PAK封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Texas Instruments NexFET 系列 N沟道 MOSFET CSD18536KTTT, 349 A, Vds=60 V, 3针+焊片 D2PAK封装
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Drain-Source Saturation Current | 200A |
| Drain-Source On-Resistance | 0.0022Ω |
| Input Capacitance | 51pF |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 12.0274 | |
| 10+ | $ 8.1171 |
Minimum:1/Multiple:1
Total amount: