Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD17575Q3
Manufacturer
TIManufacturer Product Number
CSD17575Q3
Description
场效应管(MOSFET) 2.8W；108W 30V 60A 1个N沟道 VSON-CLIP-8(3.3x3.3)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 60A |
| Drain-Source On-Resistance | 0.0032Ω |
| Input Capacitance | 204pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,542
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8146 | |
| 10+ | $ 0.6726 | |
| 30+ | $ 0.6002 | |
| 100+ | $ 0.5278 | |
| 500+ | $ 0.4289 | |
| 1000+ | $ 0.4080 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllCSD17575Q3T
MOSFET 30V,NCh NexFET Pwr MOSFET
TI
CSD17576Q5B
场效应管(MOSFET) 3.1W；125W 30V 100A 1个N沟道 VSONP-8(5x6)
TI
CSD17576Q5B
CSD17576Q5B CSD17576Q5B，30V N 通道 NexFET? 功率 MOSFET
TI
CSD17576Q5BT
N-CHANNEL NEXFET POWER MOSFET
TI
