Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD17313Q2T
Manufacturer
TIManufacturer Product Number
CSD17313Q2T
Description
Trans MOSFET N-CH 30V 19A 6-Pin WSON Plastic T/R
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source On-Resistance | 0.042Ω |
| Input Capacitance | 17pF |
| Drain-Source Saturation Current | 5 A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 226
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6197 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
CSD17318Q2
场效应管(MOSFET) 16W 30V 25A 1个N沟道 WSON-6(2x2)
TI
CSD17318Q2
30-V N-Channel NexFET™ Power MOSFET
TI
CSD17318Q2T
表面贴装 N 沟道 30V 25A（Tc） 16W（Tc） 6-WSON（2x2）
TI
CSD17322Q5A
MOSFET 30V,NCh Nex FET Pwr MOSFET
TI
