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CSD13306WT
Manufacturer
TIManufacturer Product Number
CSD13306WT
Description
Texas Instruments NexFET 系列 N沟道 Si MOSFET CSD13306WT, 3.5 A, Vds=12 V, 6引脚 DSBGA封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Continuous Drain Current | 3.5A |
| Drain-Source Voltage | 12V |
| Threshold Voltage | 1.3V @ 250μA |
| Power | 1.9W |
| Gate Charge | 11.2nC@4.5V |
| On-Resistance | 10.2mΩ@1.5A, 4.5V |
| Input Capacitance | 1370pF@6V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,126
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 250+ | $ 1.0555 | |
| 500+ | $ 0.9567 | |
| 750+ | $ 0.9065 | |
| 1250+ | $ 0.8495 | |
| 1750+ | $ 0.8160 | |
| 2500+ | $ 0.7840 | |
| 6250+ | $ 0.7116 | |
| 12500+ | $ 0.6991 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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