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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STQ1HNK60R-AP

Manufacturer

ST

Manufacturer Product Number

STQ1HNK60R-AP

Description

场效应管(MOSFET) 3W 600V 400mA 1个N沟道 TO-92-3

Manufacturer Standard Lead Time

2-3

Detailed Description

场效应管(MOSFET) 3W 600V 400mA 1个N沟道 TO-92-3

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃~150℃
Drain-Source Voltage	600V
Type	N-channel
Power	3W
Gate Charge	10nC@10V
On-Resistance	8.5Ω@500mA，10V
Threshold Voltage	3.7V@250µA
Input Capacitance	156pF@25V
Continuous Drain Current	400mA

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 1,809

Quantity	Unit Price	Ext Price
1+	$ 0.2576
100+	$ 0.1977
1000+	$ 0.1699
2000+	$ 0.1588

Price For：Each

Minimum:1/Multiple:1

Total amount:

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原装正品，工厂库存

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