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STB33N60DM2
Manufacturer
STManufacturer Product Number
STB33N60DM2
Description
STMicroelectronics MDmesh DM2 系列 N沟道 Si MOSFET STB33N60DM2, 25 A, Vds=650 V, 3引脚 D2PAK封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Threshold Voltage | 5V@250µA |
| Continuous Drain Current | 24A |
| Power | 190W |
| Gate Charge | 43nC@10V |
| On-Resistance | 130 mΩ @ 12 A, 10 V |
| Input Capacitance | 1870 pF @ 100 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 868
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 9.1685 | |
| 10+ | $ 6.1021 | |
| 100+ | $ 4.3628 | |
| 500+ | $ 4.1832 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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