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L6571BD013TR
Manufacturer
STManufacturer Product Number
L6571BD013TR
Description
HaBr MOSvIGBTDr 600V SO-8 SMD RoHSconf
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Driver Configuration | Half-bridge |
| Operating Temperature | -40℃~150℃ |
| Load Type | IGBT, N-channel MOSFET |
| Qu Dong Tong Dao Shu | 2 |
| Peak Source Current | 170mA |
| Supply Voltage | 10V~16.6V |
| Peak Sink Current | 270mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,171
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.1821 | |
| 10+ | $ 2.0846 | |
| 50+ | $ 1.9858 | |
| 100+ | $ 1.8869 | |
| 250+ | $ 1.7894 | |
| 500+ | $ 1.6905 | |
| 1000+ | $ 1.5917 | |
| 2500+ | $ 1.4914 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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