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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

US6K1TR

Manufacturer

ROHM

Manufacturer Product Number

US6K1TR

Description

MOSFET N CHANNEL TRANSISTOR TAPE

Manufacturer Standard Lead Time

10-15

Detailed Description

MOSFET N CHANNEL TRANSISTOR TAPE

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Gate-Source Breakdown Voltage	30V
Power	1 W
Drain-Source Saturation Current	1.5A
Drain-Source On-Resistance	0.34Ω

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 6,000

Quantity	Unit Price	Ext Price
10+	$ 0.3843
100+	$ 0.2910
1000+	$ 0.2353
6000+	$ 0.1810
15000+	$ 0.1574

Price For：Each

Minimum:1/Multiple:1

Total amount:

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US6K2TR

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US6K2TR

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ROHM

US6K2TR

Rds On(Max)@Id,Vgs：240mΩ@1.4A,10V Pd-功率耗散(Max)：1W 工作温度：150°C(TJ) 封装/外壳：TUMT FET类型：N-Channel

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US6K4TR

TUMT 6/1.8V Drive Nch+Nch MOSFET

ROHM