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UMD3NFHATR
Manufacturer
ROHMManufacturer Product Number
UMD3NFHATR
Description
Pre-Biased Bipolar Transistor (BJT) NPN + PNP 50V 100mA 250MHz 150mW Surface Mount UMT6
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Power | 150 mW |
| Ji Dian Ji Jie Zhi Current（icbo） | 500nA |
| Input Resistance | 10kΩ |
| Jing Ti Guan Type | NPN/PNP |
| Ji Dian Ji Current（ic） | 100mA, -100mA |
| Zui Xiao Shu Ru Voltage（vi(on）) | 3V |
| Shu Chu Voltage（vo(on）) | 0.1V |
| Resistance Bi | 1 |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V, -50V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 300mV, -300mV |
| Zui Da Shu Ru Voltage（vi(off）) | 0.5V |
| Te Zheng Frequency | 250MHz, 250MHz |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
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Associated Product
See AllUMD3NTR
封装/外壳：SOT-363 功率耗散Pd：150mW 晶体管类型：NPN/PNP 集电极-发射极最大电压VCEO：50V,-50V 集电极连续电流：100mA,-100mA
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