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RS1G120MNTB

Manufacturer

ROHM

Manufacturer Product Number

RS1G120MNTB

Description

FET类型:N-Channel 漏源极电压Vds:40V 连续漏极电流Id:12A(Ta) 栅极电压Vgs:±20V Pd-功率耗散(Max):3W(Ta),25W(Tc)

Manufacturer Standard Lead Time

5-7个

Detailed Description

FET类型:N-Channel 漏源极电压Vds:40V 连续漏极电流Id:12A(Ta) 栅极电压Vgs:±20V Pd-功率耗散(Max):3W(Ta),25W(Tc)

Datasheet

Product Attributes

Type Description
Category Boxes, Enclosures, Racks andBox Components
Gate-Source Breakdown Voltage 40V
Drain-Source Saturation Current 12A
Drain-Source On-Resistance 0.0207Ω

Documents & Media

Resource Type Link

Environmental & Export Classifications

Attribute Description

Additional Resources

Attribute Description

In Stock: 1

Quantity Unit Price Ext Price
1+ $ 0.9943
10+ $ 0.8313
30+ $ 0.7408
Price For:Each

Minimum:1/Multiple:1

Total amount:

Associated Product

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