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RQ6E030ATTCR
Manufacturer
ROHMManufacturer Product Number
RQ6E030ATTCR
Description
MOSFET Pch -30V -3A Middle Power MOSFET
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 3 A |
| Drain-Source On-Resistance | 0.135Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 100
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6740 | |
| 10+ | $ 0.5709 | |
| 100+ | $ 0.4219 | |
| 500+ | $ 0.3300 | |
| 1000+ | $ 0.2521 | |
| 3000+ | $ 0.2270 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRQ6E030SPTR
MOSFET PCH -30V -3A SMALL SIGNAL
ROHM
RQ6E030SPTR
MOSFET PCH -30V -3A SMALL SIGNAL
ROHM
RQ6E035ATTCR
FET类型：P-Channel 漏源极电压Vds：30V 连续漏极电流Id：3.5A(Ta) 栅极电压Vgs：±20V Pd-功率耗散(Max)：1.25W(Ta)
ROHM
RQ6E035ATTCR
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ROHM