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RQ5C020TPTL
Manufacturer
ROHMManufacturer Product Number
RQ5C020TPTL
Description
ROHM RTR020P02 系列 P沟道 Si MOSFET RQ5C020TPTL, 2 A, Vds=20 V, 3引脚 TSMT封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Power | 1 W |
| Drain-Source Saturation Current | 2A |
| Input Capacitance | 55 pF |
| Drain-Source On-Resistance | 0.15Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
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Associated Product
See AllRQ5C025TPTL
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ROHM
RQ5C025TPTL
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ROHM
RQ5C030TPTL
连续漏极电流Id：3A(Ta) FET类型：P-Channel 栅极电压Vgs：2V@1mA Pd-功率耗散(Max)：700mW(Ta) 封装/外壳：SC-96
ROHM
RQ5C030TPTL
原装正品，假一罚十
ROHM